| 摘要 |
Provided is a method of manufacturing a phase shift mask, which prevents an energy loss at side walls not to cause a difference in line width by forming the same chrome side walls at the etched portions and unetched portions of a quartz substrate. The method of manufacturing a phase shift mask comprises the steps of: forming a first photosensitive layer pattern on the upside of a transparent substrate(31); etching the transparent substrate(31) using the first photosensitive layer pattern as a mask, followed by removing the first photosensitive layer pattern; forming an opaque material(32) to cover the upper part of the etched transparent substrate(31); polishing the opaque material(32) by a chemical mechanical polishing process so as to expose the transparent substrate(31); forming a second photosensitive layer pattern to expose the transparent substrate(31) for phase shift; and etching the transparent substrate(31) in predetermined depth which does not cause a difference in line width using the second photosensitive layer pattern as a mask, followed by removing the second photosensitive layer pattern, wherein the transparent substrate contains the quartz substrate, and the opaque material contains chrome and aluminum.
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