Measuring method and measuring apparatus of optical energy absorption ratio, and thermal processing apparatus

摘要

Reflection intensities of a standard wafer with a known reflectance, a plain wafer on which no pattern is formed, and a semiconductor wafer to be processed practically are measured by using an optical measuring system. Their respective reflection intensities are subjected to spectral resolution processing. The optical energy value absorbed by the plain wafer is calculated from the reflection intensity of the standard wafer and the reflection intensity of the plain wafer. The absorbed optical energy value for the wafer is calculated from the reflection intensity of the standard wafer and the reflection intensity of the processing object wafer. Based on these, the optical energy absorption ratio of the processing object wafer to the plain wafer is calculated. From this optical energy absorption ratio and the optimum energy value of light irradiated to the plain wafer, the optimum energy value to be irradiated to the processing object wafer is calculated.