发明名称 CU ELECTRO DEPOSITION BY USING LEVELER
摘要 A Cu electrodeposition method which performs conformal deposition and manufactures a Cu thin film free of bumps at the same time by using a Cu electrodeposition solution comprising benzotriazole as a leveler is provided. In a Cu electrodeposition solution having a basic composition comprising copper sulfate, sulfuric acid, polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide, the Cu electrodeposition solution comprises benzotriazole as a leveler. In a Cu electrodeposition method using a basic composition comprising copper sulfate, sulfuric acid, polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide, the Cu electrodeposition method comprises performing post-electrodeposition, or pre- and post-electrodeposition using benzotriazole as a leveler. The Cu electrodeposition method comprises the steps of: (i) electrodepositing a substrate for 5 to 50 seconds in a Cu electrodeposition solution prepared by adding polyethylene glycol, sodium chloride, and bis(3-sulfopropyl)disulfide into a basic solution comprising copper sulfate and sulfuric acid; (ii) cleaning the electrodeposited substrate with ultra-pure water for 1 to 5 seconds, and removing water from the substrate using nitrogen gas; (iii) adding benzotriazole into the basic solution, and performing post-electrodeposition of the water-removed substrate for 140 seconds; and (iv) cleaning the post-electrodeposited substrate with ultra-pure water for 5 to 10 seconds, and removing water from the substrate using nitrogen gas.
申请公布号 KR20070059617(A) 申请公布日期 2007.06.12
申请号 KR20050118660 申请日期 2005.12.07
申请人 SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION;LG CHEM. LTD. 发明人 HWANG, SOON SIK;CHO, SUNG KI;KIM, SOO KIL;KIM, JAE JEONG
分类号 C25D3/00 主分类号 C25D3/00
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