发明名称 |
Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device |
摘要 |
Process exhaust gas is sampled, and the components of the process exhaust gas are analyzed by a Fourier-transform infrared spectroscope (FT-IR) ( 26 ). The analysis result is compared with a reference analysis result obtained from an analysis of process exhaust gas generated in an operation performed under reference process conditions. If the amount of a gas component changes to an amount that is outside a predetermined range set around a reference value obtained from the reference analysis result, a signal indicating a process error is outputted. Instead of the output of the signal indicating a process error, the process conditions can be automatically adjusted.
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申请公布号 |
US7229843(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20050062470 |
申请日期 |
2005.02.22 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOMIYAMA KIYOSHI;SHIMODA TAKAHIRO;NISHIKAWA HIROSHI |
分类号 |
H01L21/00;C23C16/44;C23C16/52;H01L21/205;H01L21/302;H01L21/3065 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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