发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 A substrate processing apparatus is provided to extend the lifetime of etchant by removing the metal ions remaining in the etchant by an absorption part. A wet etching part(210) etches a metal layer formed on a substrate by using etchant. An absorption part(220) absorbs the metal ions remaining the etchant, including an absorbing agent made of a mesoporous molecular sieve. The etchant passing through the absorption part is stored in a storage part(230). The etchant stored in the storage part is supplied to the wet etching part by a pump part(250). Etch residue in the etchant is filtered by the absorption part. The etchant stored in the storage part is exhausted by an exhaust part(260).
申请公布号 KR20070059256(A) 申请公布日期 2007.06.12
申请号 KR20050117903 申请日期 2005.12.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOUNG, JONG HYUN
分类号 H01L21/306 主分类号 H01L21/306
代理机构 代理人
主权项
地址