| 摘要 |
The present invention provides a magnetic memory device based on a novel driving method realizing reliable writing and a method of writing the magnetic memory device. Four parallel portions are formed in a pair of loop-shaped write lines ( 6 Xn) and ( 6 Yn). Magnetoresistive devices ( 12 A) and ( 12 B) disposed in the parallel portion in an upper stage construct a memory cell ( 12 Ev), and magnetoresistive devices ( 12 A) and ( 12 B) disposed in the parallel portion in a lower stage construct a memory cell ( 12 Od). When current in the direction from the drive point A to the drive point B is passed from the current drives ( 123 n) and ( 133 n), the directions of the currents in the write lines ( 6 Xn) and ( 6 Yn) are aligned in the parallel portion of the memory cell ( 12 Ev) but are opposite to each other in the parallel portion in the memory cell ( 12 Od). In the memory cell ( 12 Ev), induced magnetic fields enhance each other, and the magnetization directions of the magneto-sensitive layers of the magnetoresistive devices ( 12 A) and ( 12 B) are anti-parallel with each other. In the memory cell ( 12 Od), the induced magnetic fields cancel each other out.
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