发明名称 |
Vertical FET with nanowire channels and a silicided bottom contact |
摘要 |
A vertical FET structure with nanowire forming the FET channels is disclosed. The nanowires are formed over a conductive silicide layer. The nanowires are gated by a surrounding gate. Top and bottom insulator plugs function as gate spacers and reduce the gate-source and gate-drain capacitance.
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申请公布号 |
US7230286(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20050135227 |
申请日期 |
2005.05.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COHEN GUY MOSHE;SOLOMON PAUL M. |
分类号 |
H01L27/10;H01L29/73;H01L29/76;H01L29/94;H01L31/062 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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