发明名称 |
Storage nodes of a semiconductor memory |
摘要 |
A semiconductor memory device is provided, including a substrate and storage nodes formed on the substrate from a silicon oxide layer, the layer having been substantially removed by wet etching the silicon oxide layer to a predetermined depth of the storage nodes and dry etching the remaining portion of the silicon oxide layer to expose the storage nodes.
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申请公布号 |
US7230293(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20050061215 |
申请日期 |
2005.02.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SANG-YONG;LEE KUN-TACK;HAN YONG-PIL |
分类号 |
H01L27/04;H01L31/119;H01L21/02;H01L21/302;H01L21/311;H01L21/336;H01L21/461;H01L21/8242 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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