发明名称 |
Integrated circuit capacitor structure |
摘要 |
Embodiments of the invention include a MIM capacitor having a high capacitance with improved manufacturability. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
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申请公布号 |
US7229875(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20030688077 |
申请日期 |
2003.10.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KYOUNG-WOO;PARK WAN-JAE;AHN JEONG-HOON;LEE KYUNG-TAE;JUNG MU-KYENG;LEE YONG-JUN;KIM IL-GOO;LEE SOO-GEUN |
分类号 |
H01L21/8234;G02F1/136;H01L21/20;H01L21/8242 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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