发明名称 |
Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels |
摘要 |
Integrated circuit field effect transistors are manufactured by forming a pre-active pattern on a surface of a substrate, while refraining from doping the pre-active pattern with phosphorus. The pre-active pattern includes a series of interchannel layers and channel layers stacked alternately upon each other. Source/drain regions are formed on the substrate, at opposite ends of the pre-active pattern. The interchannel layers are then selectively removed, to form tunnels passing through the pre-active pattern, thereby defining an active channel pattern including the tunnels and channels including the channel layers. The channels are doped with phosphorus after selectively removing the interchannel layers. A gate electrode is then formed in the tunnels and surrounding the channels.
|
申请公布号 |
US7229884(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20040998472 |
申请日期 |
2004.11.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JIN-JUN |
分类号 |
H01L21/336;H01L27/092;H01L21/335;H01L21/8234;H01L21/8238;H01L29/10;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|