| 摘要 |
A chemical mechanical polishing slurry for metal circuits is provided to have high selectivity to metal circuits and minimize scratches, dishing, and erosion. The chemical mechanical polishing slurry for metal circuits comprises, as an abrasive, organosilicate which is homopolymer or copolymer of silane substituted with an alkyl group and an alkoxy group having 1-3 carbon atoms. The organosilicate is selected from homopolymers of methyltrimethoxysilane or dimethyldimethoxysilane, and copolymers of methyltrimethoxysilane or dimethyldimethoxysilane and a compound selected from (R)_(4-n)-Si-(OR)_n, (R)_(4-n)-Si-O-Si-(OR)_n, (R')_(4-n)-Si-(Cl)_n, and (R')_(4-n)-Si-O-Si-(Cl)_n(wherein, R is a C2-3 alkyl group, R' is a C1-3 alkyl group, and n is 1, 2, or 3).
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