发明名称 |
Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step |
摘要 |
A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.
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申请公布号 |
US7230805(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20050036238 |
申请日期 |
2005.01.13 |
申请人 |
HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS, B.V. |
发明人 |
CHILDRESS JEFFREY ROBINSON;FONTANA, JR. ROBERT EDWARD;LILLE JEFFREY S. |
分类号 |
G11B5/39;G11B5/10;G11B5/31;G11B5/33;H01L43/00 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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