发明名称 DONOR SUBSTRATE FOR LASER INDUCED THERMAL IMAGING AND METHOD OF FABRICATING THEREOF, AND METHOD OF FABRICATING OLED USING THE SAME
摘要 A donor substrate for laser induced thermal imaging and a fabricating method thereof, and a method for fabricating an OLED using the same are provided to prevent gas generated from a photo-thermal conversion layer from permeating into a transfer layer and to prevent a damage of the substrate due to a laser beam by forming a buffer layer made of parylene. A donor substrate(10) for laser induced thermal imaging includes a substrate(11). A photo-thermal conversion layer(12) is placed on the substrate(11). A buffer layer(13) having a thickness of 500~800 Å includes parylene on the photo-thermal conversion layer(12) over the whole surface of the substrate(11). A transfer layer(14) is placed on the buffer layer(13).
申请公布号 KR20070059725(A) 申请公布日期 2007.06.12
申请号 KR20050118908 申请日期 2005.12.07
申请人 SAMSUNG SDI CO., LTD. 发明人 SEONG, JIN WOOK;KIM, MU HYUN;LEE, SEONG TAEK;YEO, JONG MO
分类号 H05B33/10 主分类号 H05B33/10
代理机构 代理人
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