发明名称 |
DONOR SUBSTRATE FOR LASER INDUCED THERMAL IMAGING AND METHOD OF FABRICATING THEREOF, AND METHOD OF FABRICATING OLED USING THE SAME |
摘要 |
A donor substrate for laser induced thermal imaging and a fabricating method thereof, and a method for fabricating an OLED using the same are provided to prevent gas generated from a photo-thermal conversion layer from permeating into a transfer layer and to prevent a damage of the substrate due to a laser beam by forming a buffer layer made of parylene. A donor substrate(10) for laser induced thermal imaging includes a substrate(11). A photo-thermal conversion layer(12) is placed on the substrate(11). A buffer layer(13) having a thickness of 500~800 Å includes parylene on the photo-thermal conversion layer(12) over the whole surface of the substrate(11). A transfer layer(14) is placed on the buffer layer(13). |
申请公布号 |
KR20070059725(A) |
申请公布日期 |
2007.06.12 |
申请号 |
KR20050118908 |
申请日期 |
2005.12.07 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
SEONG, JIN WOOK;KIM, MU HYUN;LEE, SEONG TAEK;YEO, JONG MO |
分类号 |
H05B33/10 |
主分类号 |
H05B33/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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