VERTICALLY STRUCTURED GAN TYPE LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A GaN-based LED(light emitting diode) with a vertical structure is provided to stably guarantee contact resistance of an n-type electrode by avoiding damage to an n-type GaN layer for contacting the n-type electrode. A p-type electrode(206) is formed on a structure support layer(207). A p-type GaN layer(205) is formed on the p-type electrode. An active layer(204) is formed on the p-type GaN layer. An n-type GaN layer(203) for contacting the n-type electrode is formed on the active layer. An etch stop layer(300) is formed on the n-type GaN layer for contacting the n-type electrode, exposing a part of the n-type GaN layer for contacting the n-type electrode. An n-type electrode(210) is formed on the n-type GaN layer exposed by the etch stop layer. The etch stop layer can be made of a material having a different etch ratio from that of the n-type GaN layer.