发明名称 |
NEAR-FIELD OPTICAL PROBE BASED ON SOI SUBSTRATE AND FABRICATION METHOD THEREOF |
摘要 |
A near-field optical probe based on an SOI(Silicon On Insulator) substrate is provided to restrain the generation of impact between a tip and a sample by using an improved tip structure. A near-field optical probe includes a cantilever arm support part and a cantilever arm. The cantilever arm support part(62) is composed of a lower silicon layer(10) of an SOI substrate(18). The cantilever arm support part includes a through hole at one side of the lower silicon layer. The cantilever arm(64) is composed of a bonding oxide pattern(12) and an upper silicon pattern(16a), a silicon oxide pattern and a light transmission preventing layer. The silicon oxide pattern(26a) includes a tip(38) with an aperture(40). The light transmission preventing layer is formed on the silicon oxide pattern without filling up the aperture. The tip is formed like a cone type structure or a parabola type structure.
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申请公布号 |
KR20070059916(A) |
申请公布日期 |
2007.06.12 |
申请号 |
KR20060085823 |
申请日期 |
2006.09.06 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM, EUN KYOUNG;LEE, SUNG Q;PARK, KANG HO |
分类号 |
H01L21/66;G11B9/14;H01L21/302 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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