发明名称 |
Ferroelectric capacitors having oxidation barrier conductive layers and lower electrodes disposed in trenches defined by supporting insulating layers |
摘要 |
Ferroelectric capacitors are provided that include an integrated circuit substrate and a supporting insulation layer on the integrated circuit substrate having a face and a trench in the face. An oxidation barrier conductive layer is provided in the trench and a lower electrode is provided on the oxidation barrier conductive layer. A ferroelectric layer is provided on the lower electrode and an upper electrode is provided on the ferroelectric layer. Related methods of fabricating ferroelectric capacitors are also provided.
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申请公布号 |
US7230291(B2) |
申请公布日期 |
2007.06.12 |
申请号 |
US20030650879 |
申请日期 |
2003.08.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-HO |
分类号 |
H01L27/108;H01L29/76;H01L21/02;H01L21/8246 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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