| 摘要 |
A method for forming a semiconductor device is provided to restrain the increase of connection resistance of upper and lower metal lines, to prevent the electric short between the metal lines and to restrain the damage of a low-k interlayer dielectric due to the residues of fluorine. An interlayer dielectric(140) is formed by depositing sequentially a silicon nitride layer and a silicon oxide layer on a substrate with a lower metal line. A via hole(180) for exposing partially the lower metal line to the outside is formed on the resultant structure by etching selectively the interlayer dielectric. At this time, a predetermined material containing fluorine is removed therefrom. An upper metal line metal film is formed on the resultant structure in order to fill the via hole.
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