| 摘要 |
A method of manufacturing a semiconductor device is provided to control the variation of a threshold voltage in a PMOS portion of a peripheral region by preventing the boron of a BPSG insulating layer from penetrating into an unwanted portion using sequentially a heat treatment and an As ion implantation on a buffer oxide layer. A gate is formed on a semiconductor substrate(21) defined with a cell region and a peripheral region. A gate spacer insulating layer(25) is formed at both sidewalls of the gate. A buffer oxide layer(26) is formed on the entire surface of the resultant structure. A heat treatment is performed on the buffer oxide layer of the peripheral region. An As ion implantation is performed on the resultant buffer oxide layer. A cell spacer insulating layer(27) is formed on the buffer oxide layer. A BPSG insulating layer(28) is formed on the cell spacer insulating layer.
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