发明名称 WAFER LEVEL PACKAGE AND METHOD FOR FABRICATING THE SAME
摘要 A wafer level package and its manufacturing method are provided to intensify a power line and to embody the device having high integration and speed by forming a power plane in the wafer level package itself using a multilayer structure in a pad rerouting process. First and second bonding pads(22a,22b) are arranged on a center portion of a semiconductor chip(21) in two rows. A first insulating layer(23) for exposing the first and second bonding pads to the outside is formed on the chip. A connection line is formed on the first insulating layer to contact the first bonding pad. A power plane(24b) is formed at an outer portion of the second bonding pad. A second insulating layer(25) is formed on the first insulating layer including the connection line and the power plane. At this time, a portion of the connection line and the second bonding pad are exposed to the outside through the second insulating layer. A metal line(26) is formed on the second insulating layer to contact the exposed connection line portion and second bonding pad. A third insulating layer(27) for exposing partially the metal line to the outside is formed thereon.
申请公布号 KR100728988(B1) 申请公布日期 2007.06.08
申请号 KR20060059835 申请日期 2006.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, SEUNG HYUN;SUH, MIN SUK
分类号 H01L23/48;H01L21/60 主分类号 H01L23/48
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