| 摘要 |
<p>A phase change RAM device and its fabricating method are provided to reduce a contact area between electrodes and a phase change layer by interposing the phase change layer between upper and lower electrodes. A lower electrode(41) is formed in a pattern shape to be in contact with a lower pattern of a semiconductor substrate(31). A phase change layer(42) is formed on the lower electrode, and has a size smaller than the lower electrode. An upper electrode(43) is formed in a pattern shape on the phase change layer, and has a size larger than the phase change layer. An insulation layer(44) is formed on the substrate to cover the structure of the lower electrode, the phase change layer and the upper electrode.</p> |
