发明名称 |
NITRIDE SEMICONDUCTOR SINGLE CRYSTAL INCLUDING GA, METHOD FOR MANUFACTURING THE SAME, AND SUBSTRATE AND DEVICE USING THE CRYSTAL |
摘要 |
A nitride semiconductor single crystal including Ga is characterized in that (a) the maximum reflectance measured by irradiating the nitride semiconductor single crystal with light having a wavelength of 450nm is 20% or less, and a difference between the maximum reflectance and the minimum reflectance is within 10% or (b) the ratio of the maximum value to the minimum value of dislocation density measured by a cathode luminescence method (maximum value/minimum value) is 10 or less and/or (c) a life measured by a time-resolved photoluminescence method is 95ps or more.
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申请公布号 |
KR20070058465(A) |
申请公布日期 |
2007.06.08 |
申请号 |
KR20077004662 |
申请日期 |
2007.02.27 |
申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
KIYOMI KAZUMASA;NAGAOKA HIROBUMI;OOTA HIROTAKA;FUJIMURA ISAO |
分类号 |
C30B29/38 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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