发明名称 |
LOW-PRESSURE DEPOSITION OF RUTHENIUM AND RHENIUM METAL LAYERS FROM METAL-CARBONYL PRECURSORS |
摘要 |
A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.
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申请公布号 |
KR20070058439(A) |
申请公布日期 |
2007.06.08 |
申请号 |
KR20077002478 |
申请日期 |
2007.01.31 |
申请人 |
TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YAMASAKI HIDEAKI;SUZUKI KENJI;GUIDOTTI EMMANUEL;MOSCA ENRICO;LEUSINK GERT J.;KAWANO YUMIKO;MCFEELY FENTON R.;MALHOTRA SANDRA G. |
分类号 |
H01L21/285;C23C16/16;H01L21/205 |
主分类号 |
H01L21/285 |
代理机构 |
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地址 |
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