| 摘要 |
A method for forming a transistor in a semiconductor device is provided to desirably perform a cell halo ion implantation process even in a miniaturized and high-integrated semiconductor device by selectively implanting impurity ions into only a semiconductor substrate at a btiline node part. A gate insulation layer(108) and a first polysilicon layer(110) are sequentially formed on a semiconductor substrate(100). A photoresist layer pattern(112) is formed on the first polysilicon layer, opening a bitline node part. The first polysilicon layer in the bitline node part is eliminated by using the photoresist layer pattern as a mask. Impurity ions are implanted into the semiconductor substrate in the bitline node part by using the photoresist layer pattern and the first polysilicon layer as an ion implantation mask. The photoresist layer pattern is removed. A second polysilicon layer is formed on the first polysilicon layer. The second polysilicon layer is planarized. A metal silicide layer and a hard mask layer are sequentially formed on the second polysilicon layer. The hard mask layer, the metal silicide layer, the first and second polysilicon layers and the gate insulation layer are sequentially patterned to form a plurality of gate electrodes.
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