| 摘要 |
An asynchronous parameter measurement test circuit in a semiconductor memory device applied with an address double pump is provided to measure an asynchronous parameter during a wafer test, by generating a column command signal at the next clock after a row command signal is generated, when entering a test mode. An address generation part generates a column address and a row address by latching addresses provided by an address double pump method from the outside, and provides a test address with the column address in a test mode. A command decoder(200) provides a row command signal for access to the row address and a column command signal for access to the column address by decoding a command provided from the outside. A test control part(600) generates a test command signal at the next clock after the row command signal is generated by using the row command signal on the basis of an internal clock in the test mode and then provides the test command signal to the column command signal.
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