| 摘要 |
<p>A semiconductor device is provided to embody high productivity, high stability and low fabricating cost by collectively fabricating a plurality of semiconductor chips. A semiconductor chip is covered with a first insulation layer in a manner that at least a part of a terminal electrode(2) of the semiconductor chip is exposed. A second insulation layer is formed on the first insulation layer. The terminal electrode of the semiconductor chip is drawn out to a connection position with an outer circuit through the second insulation layer by a re-write layer(13). A plating lower layer connected to the terminal electrode is formed only in an existing region of the terminal electrode or in a region from the existing region to the upper part of the first insulation layer. At least a part of the re-write layer is made of a plating layer formed in the lower layer. The plating lower layer can be made of a single layer or a multilayer, and a contact part of the plating lower layer and the terminal electrode can be formed by an electroless plating method.</p> |
