发明名称 A METHOD AND SYSTEM FOR FORMING A PASSIVATED METAL LAYER
摘要 A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate (50, 302, 403, 510) in a process chamber (1), exposing the substrate (50, 302, 403, 510) to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer (304, 408, 508) on the substrate (50, 302, 403, 510) in a chemical vapor deposition process, and forming a passivation layer (414, 590) on the rhenium metal layer (304, 408, 580) to thereby inhibit oxygen-induced growth of rhenium-containing nodules (306) on the rhenium metal surface.
申请公布号 KR20070058497(A) 申请公布日期 2007.06.08
申请号 KR20077005723 申请日期 2005.09.21
申请人 TOKYO ELECTRON LIMITED;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 YAMASAKI HIDEAKI;NAKAMURA KAZUHITO;KAWANO YUMIKO;LEUSINK GERRIT J.;MCFEELY FENTON R.;JAMISON PAUL
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
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