| 摘要 |
A method for measuring a capacitance is provided to improve the exactness in a capacitance measurement and to reduce the size of a test pattern of an MOSFET by minimizing the influence of a gate-drain overlap capacitance on an interconnect capacitance measurement using a floating gate of a semiconductor device. A circuit is formed, wherein the circuit is composed of a drain connected to the ground, an MOSFET with a source and gate connected with each other and a gate, and a reference capacitor connected to the gate. The reference capacitor is applied with Vf. Vs is measured by applying the Vf to the reference capacitor while Is is applied to the source of the MOSFET. When the Vf is zero, the Vs becomes V0(Is). A slope is extracted from a relation graph between the Vs and Vf. The rate between a standard slope, a gate-drain overlap capacitance of the MOSFET, and the capacitance of the reference capacitor is extracted from a simple equation, wherein the simple equation is obtained from the relation between the slope and V0(Is) according to the Is.
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