| 摘要 |
PROBLEM TO BE SOLVED: To obtain a substrate crystallized in a strip form for a display device which can minimize peel off of a semiconductor by suppressing aggregation upon crystallization by irradiation of a continuous oscillation laser. SOLUTION: A silicon nitride film 102 and an silicon oxide film 103 are formed as base films on a glass substrate 101 having a raised part, and a silicon base film 107 is formed on the substrate. A bank 200 is positioned on the lower layer of the silicon base film 107 to be intersected by a scan direction S of a laser. Aggregations 304 generated by the laser scan stop at positions going beyond the bank 200, and thereafter a strip-crystallized silicon film 302 is normally formed. COPYRIGHT: (C)2007,JPO&INPIT |
