| 摘要 |
PROBLEM TO BE SOLVED: To restrain driving ability of a frame memory in a solid state image sensing device of a MOS type which temporarily stores electric charge signals which are obtained by imaging in a frame memory, in an amplified type solid state image sensing device of a MOS type. SOLUTION: A picture element area (21), a memory portion (42), a source follower circuit (100) and scanning means (25-29) are installed. In the picture element area (21), a plurality of picture elements (22) are two-dimensionally arranged. The picture element (22) is provided with at least a photoelectric conversion portion for converting incident light to an electric charge signal and with an amplifier transistor which amplifies and outputs the electric charge signal outputted from the photoelectric conversion portion. The memory portion (42) is provided with memory cells (43) which correspond to the photoelectric conversion portions and are used for holding the electric charge signals outputted from each of the picture elements, respectively, and with a plurality of memory input output lines (56) for outputting the electric charge signals held at each of the memory cells. The source follower circuit (100) performs impedance conversion of the output from the memory portion. The scanning means (25-29) performs sequential scanning of the electric charge signals held in the memory cells via the source follower circuit and performs outputting outside. COPYRIGHT: (C)2007,JPO&INPIT
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