| 摘要 |
PROBLEM TO BE SOLVED: To promote a heat exchange between a material melt reservoir and a material melt center. SOLUTION: A method of manufacturing an epitaxial wafer comprises processes of introducing epitaxially growing materials into material melt reservoirs 8(9, 10), fusing the materials by heating the material melt reservoirs 8(9, 10), and then bringing the growth surface of a substrate 7 into contact with melts kept in the material melt reservoirs 8(9, 10) to enable the substrate 7 to grow epitaxially. In the above epitaxial wafer manufacturing method, the surface regions of the substrate 7 brought into contact with the melt kept in the material melt reservoirs 8(9, 10) are expanded in area toward the centers of the material melt reservoirs 8(9, 10), to promote a heat exchange between the centers of melts and the material melt reservoirs 8(9, 10). COPYRIGHT: (C)2007,JPO&INPIT
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