发明名称 METHOD FOR DEPOSITING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method which can be industrially satisfactorily utilized when a thin film is deposited by generating a discharge plasma by the use of a raw material gas containing a carbon source and by which the thin film having good quality can be obtained and the yield of the thin film can be remarkably enhanced. SOLUTION: When the thin film 7 is deposited on a substrate 6 by generating a discharge plasma by applying a pulse voltage to electrode 5 in an atmosphere containing the raw material gas A containing a carbon source, the continuing time of the pulse voltage is 10 to 1,000 nsec and the pressure is≤50 Torr. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007138253(A) 申请公布日期 2007.06.07
申请号 JP20050333868 申请日期 2005.11.18
申请人 NGK INSULATORS LTD 发明人 SAITO TAKAO;KONDO YOSHIMASA
分类号 C23C16/515 主分类号 C23C16/515
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