| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a metal-oxide semiconductor material for gas sensor, which can improve sensitivity in detecting a gas and keep the gas detecting sensitivity high, over a long period of time. SOLUTION: A metal salt is brought to drip in an alkaline water solution under churning, thereby preparing a water solution in which an oxide precursor is dispersed. A noble metal colloid solution is added to the water solution in which the oxide precursor is dispersed, thereby preparing a dispersion solution, in which the oxide precursor and nobel metal colloid are dispersed almost evenly. The metal-oxide semiconductor material is manufactured, by calcinating the sediment of the dispersion solution. COPYRIGHT: (C)2007,JPO&INPIT
|
