发明名称 |
Methods of Fabricating Semiconductor Devices with a Source/Drain Formed on a Recessed Portion of an Isolation Layer |
摘要 |
Semiconductor devices and methods of fabricating semiconductor devices that include a substrate and a device isolation layer in the substrate that defines an active region of the substrate are provided. The device isolation layer has a vertically protruding portion having a sidewall that extends vertically beyond a surface of the substrate. An epitaxial layer is provided on the surface of the substrate in the active region and extends onto the device isolation layer. The epitaxial layer is spaced apart from the sidewall of the vertically protruding portion of the device isolation layer. A gate pattern is provided on the epitaxial layer and source/drain regions are provided in the epitaxial layer at opposite sides of the gate pattern.
|
申请公布号 |
US2007128789(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
US20070673198 |
申请日期 |
2007.02.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM HOON;JUNG SOON-MOON;CHO WON-SEOK |
分类号 |
H01L21/8238;H01L21/8234 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|