| 摘要 |
A semiconductor device of the present invention includes a source region, a drain region, a gate having a first sidewall, a first insulating sidewall structure disposed to contact the first sidewall of the gate, and a first conductive sidewall structure that is electrically isolated from the gate through the first insulating sidewall structure and electrically coupled to a first region that is one of the source region or the drain region. According to this semiconductor device, the first conductive sidewall structure has an electric potential that is substantially the same as that of the first region. Therefore, steep band bending is not generated in a portion of the first region that is disposed in the vicinity of a gate insulation film. Because of this, the first sidewall structure makes it possible to inhibit the band-to-band tunneling current.
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