发明名称 High-throughput deposition system for oxide thin film growth by reactive coevaportation
摘要 A heater for growing a thin film on substrates contained on a substrate support member includes a plurality of heater elements. The substrate support member containing the substrates is at least partially surrounded by the plurality of heater elements. At least two of the plurality of heater elements are moveable with respect to one another so as to provide external access to the substrate support member. An oxygen pocket is formed in one of the heater elements or a separate oxygen pocket member and is used for oxidation of the film on the substrates.
申请公布号 US2007125303(A1) 申请公布日期 2007.06.07
申请号 US20050293346 申请日期 2005.12.02
申请人 RUBY WARD;VON DESSONNECK KURT;MOECKLY BRIAN 发明人 RUBY WARD;VON DESSONNECK KURT;MOECKLY BRIAN
分类号 C23C16/00 主分类号 C23C16/00
代理机构 代理人
主权项
地址