SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SAME

摘要

PROBLEM TO BE SOLVED: To improve a connection failure that occurs between semiconductor devices due to their warpings at high temperatures.

SOLUTION: The semiconductor device is composed of a first semiconductor device 10a and a second semiconductor device 10b, and the devices 10a and 10b are joined together by connecting a land 13b formed on the device 10a with a land 13c formed on the device 10b through the intermediary of an intermediate electrode 17. The outline 21 of a formation region with the intermediate electrode 17 is formed into a polygonal shape that has more sides than the external shape of the substrate 11b of the device 10a, so as to enable the intermediate electrode 17 to be formed avoiding the corner C of the device 10b.

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