| 摘要 |
PROBLEM TO BE SOLVED: To form a highly reliable embedding pattern by sufficiently decreasing an etching speed and maintaining a high CMP speed. SOLUTION: A metal polishing solution contains (1) an oxidizing agent for a metal; (2) a dissolving agent for an oxidized metal; (3) a first protective film-forming agent such as an amino acid or azoles which adsorbs physically on the surface of the metal film and/or forms a chemical bond, thereby forming a protective film; (4) a second protective film-forming agent such as polyacrylic acid, polyamide acid or a salt thereof for assisting the first protective film-forming agent in forming the protective film; and (5) water. COPYRIGHT: (C)2007,JPO&INPIT
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