发明名称 Controlling removal rate uniformity of an electropolishing process in integrated circuit fabrication
摘要 A metal layer formed on a wafer, the wafer having a center portion and an edge portion, is electropolished by aligning a nozzle and the wafer to position the nozzle adjacent to the center portion of the wafer. The wafer is rotated. As the wafer is rotated, a stream of electrolyte is applied from the nozzle onto a portion of the metal layer adjacent to the center portion of the wafer to begin to electropolish the portion of the metal layer with a triangular polishing profile to initially expose an underlying layer underneath the metal layer at a point.
申请公布号 US2007125661(A1) 申请公布日期 2007.06.07
申请号 US20050590460 申请日期 2005.02.23
申请人 ACM RESEARCH INC. 发明人 WANG HUI;MUHAMMED AFNAN;WANG JIAN;GUTMAN FELIX;HO FREDERICK;CHOCSHI HIMANSHU J.
分类号 B23H3/00 主分类号 B23H3/00
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