CVD apparatus for depositing polysilicon

摘要

Disclosed is a CVD apparatus for depositing polysilicon without a separate following annealing process, the CVD apparatus comprising: a chamber to form a thin film on a substrate; a showerhead placed in an upper part of the chamber to inject reaction gas onto the substrate; a distributor formed with distributing holes to uniformly distribute the reaction gas; a catalyst hot wire unit to heat and dissolve the reaction gas injected through the distributing holes of the distributor; a chuck on which the substrate is mounted; a discharging hole to discharge the reaction gas; and a shielding wall provided as a lateral wall of the chamber and formed with a heater to suppress particle generation. With this configuration, the particle generation is minimized and thus the yield is enhanced. Also, the thin film has good crystallinity, and decreased hydrogen content.