| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of stable data storage and high-speed reading. <P>SOLUTION: The semiconductor storage device has a memory cell array and a current detection type sense amplifier circuit for detecting a difference between cell current for reading its data and reference current. The memory cell array has a plurality of information cells in which one of the multivalue data levels is written, one or more first reference cells in which reference data level for generating the reference current for reading the information cells is written and which has the same structure and the same connection state as those of the information cells, and one or more second reference cells which is for generating reference current for setting the lowest order data level of the multivalue data levels and for setting the reference data level of the first reference cell and which has the same structure as that of the information cells and a different connection state from that of the information cells. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
