SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME (METHOD AND STRUCTURE OF IMPROVING PERFORMANCE OF BOTH N-TYPE MOSFET AND P-TYPE MOSFET BY STRESSED FILM)

摘要

PROBLEM TO BE SOLVED: To provide a structure having the superposition of stressed layers bringing a compressive stress into the channel of a p-type MOSFET device and a tensile stress into the channel of an n-type MOSFET device on each gate stack and including the p-type MOSFET device and the n-type MOSFET device that are adjacent, and to provide a method of manufacturing the same. SOLUTION: One of a p-type MOSFET device or an n-type MOSFET device has a height shorter than that of the other adjacent device, and the boundary of the shorter device of the two devices is defined by a discontinuity, i.e. an opening part in the stressed layers superposed on the shorter device. In a preferable method for forming the device, a single stressed layer is formed on the gate stack having different heights for forming a first type stress in the substrate under the gate stack. An opening part is formed in the stressed layer at a distance from the shorter gate stack, so that a second type stress is formed under the shorter gate stack. COPYRIGHT: (C)2007,JPO&INPIT