| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor for reducing a leakage current, and a method of manufacturing the thin film transistor. SOLUTION: The thin film transistor is provided with: a flexible substrate 100; a diffusion preventing layer 110 formed on the flexible substrate 100; buffer layers 120 formed by laminating at least two insulating materials on the diffusion preventing layer 110; a semiconductor layer 130 formed by having a channel layer 130a and source/drain regions 130b on a region of one of the buffer layers 120; a gate insulating layer 140 formed on the buffer layers 120 including the semiconductor layer 130; a gate electrode 150 formed in a region corresponding to the channel layer 130a on the gate insulating layer 140; an interlayer dielectric 160 formed on the gate insulating layer 140 containing the gate electrode 150; and source/drain electrodes 180a, 180b which are formed to have a predetermined contact hole 170 for exposing at least one region of the source/drain regions 130b to the interlayer dielectric 160 and to be connected with the source/drain regions 130b. COPYRIGHT: (C)2007,JPO&INPIT
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