| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device that prevents a bit line leak caused by charging on a shielding film generated in a process for manufacturing a semiconductor memory device and is of high reliability. SOLUTION: In the semiconductor memory device having a memory device constituted by a diffusion layer where the bit line 12 is formed on a semiconductor substrate 11 and the shielding film 17 is formed above the memory device, a discharging means 21 is formed on the substrate 11, an electric charge charged in the film 17 is discharged into the substrate 11 through the means 21. In addition, the discharging means has a switching function, the electric charge charged in the film 17 is discharged into the substrate 11 by turning ON the switching function during rewriting, and the film 17 is allowed to be electrically floating by turning OFF the switching function during reading. COPYRIGHT: (C)2007,JPO&INPIT
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