| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for fabricating the same substrate surface for an SOI area and a bulk area with ease and high precision, equalizing the thickness of embedded oxide film, and preventing the embedded oxide film from being exposed to the substrate surface. SOLUTION: A mask oxide film 19 is partially formed on the surface of a substrate 12 which has been composed of silicon monocrystal, oxygen ions 16 are implanted on the substrate surface via the mask oxide film 19, and then this substrate is annealed to form an embedded oxide film 13 in the inside of the substrate. A thermally-oxidized film 24 is formed on a substrate surface 12a to be used as an SOI area without mask oxide film formation between a process for forming a mask oxide film and a process for implanting oxygen ions, so that a concave part 12c with a predetermined depth deeper than that of a substrate surface 12b to be used as a bulk area with a mask oxide film formed is formed on the substrate surface 12a to be used as an SOI area. COPYRIGHT: (C)2007,JPO&INPIT
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