| 摘要 |
PROBLEM TO BE SOLVED: To obtain a process for fabricating a semiconductor device having a P-channel field effect transistor and an N-channel field effect transistor in which performance of these field effect transistors can be enhanced easily. SOLUTION: A sequential laminate of gate insulating films 11 and 21, polysilicon electrodes 63a and 63b, and gap films 65a and 65b is formed on a semiconductor substrate 10 for every field effect transistor to be formed, and then sidewall spacers 17 and 27 are formed on the opposite side faces of each polysilicon electrode in the linewidth direction directly or through offset spacer films 15 and 25. An interlayer insulating film 73a having an upper surface located on a plane including the upper surface of each cap film is formed and then these cap films are removed to expose the upper surface of each polysilicon electrode. A first metal layer 75a or a second metal layer 79 are then formed thereon and underlying polysilicon electrodes are silicificated entirely by that metal layer to form a gate electrode composed of silicide of different metals. COPYRIGHT: (C)2007,JPO&INPIT
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