| 摘要 |
PROBLEM TO BE SOLVED: To prevent aggregation for blocking the formation of a strip of crystal when forming a strip of crystal silicon film on a substrate by lateral growth. SOLUTION: A recessed defect DF on the substrate is buried for improving a surface state by providing a coating type substrate film SPL on the substrate SUB 1 for forming a silicon film, and a polysilicon film PSI is formed as a precursor film on the substrate film SPL. Continuous oscillation laser beams LL are applied to the polysilicon film PSI and scanning is made in the direction of an arrow S for annealing, thus preventing the occurrence of aggregation caused by the state on the substrate surface in the growth in the scanning direction of the strip of crystal. COPYRIGHT: (C)2007,JPO&INPIT |
