| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a film by sputtering a target, at a high film-forming rate, and to provide an apparatus therefor. SOLUTION: This film-forming method includes repeating the steps of: forming an aluminum film on the surface of a substrate 6, by supplying an argon gas to a plasma chamber 2, applying voltage to the target 5 made from aluminum, thereby projecting argon ions onto the surface of the target 5, and making the target 5 emit sputtered particles toward the substrate 6; subsequently converting an aluminum film into a nitrided aluminum film, by supplying nitrogen gas to the plasma chamber 2 after having finished applying the voltage to the target 5, applying voltage to a substrate holder 7 to project argon ions and nitrogen ions onto the surface of the substrate 6, and making nitrogen ions nitride the aluminum film; and forming the aluminum film on the nitrided aluminum film, by stopping the supply of the nitrogen gas, and applying voltage again to the target 5. COPYRIGHT: (C)2007,JPO&INPIT
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