GALLIUM NITRIDE MATERIAL DEVICES AND ASSOCIATED METHODS

摘要

Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure (29) connected to a source electrode (14) . The conductive structure may form a source field plate which can be formed over a dielectric material (28) and can extend in the direction of the gate electrode (18) of the transistor. The source field plate may reduce the electrical field (e.g., peak electrical field and/or integrated electrical field) in the region of the device between the gate electrode and the drain electrode (16) which can lead to a number of advantages including reduced gate-drain feedback capacitance, reduced surface electron concentration, increased breakdown voltage, and improved device reliability. These advantages enable the gallium nitride material transistors to operate at high drain efficiencies and/or high output powers. The devices can be used in RF power applications, amongst others.