| 摘要 |
<p>A nitride semiconductor light-emitting element exhibiting high internal quantum efficiency by accelerating recombination light emission while employing such a multiple quantum well structure wherein a well layer has a relatively large thickness. The nitride semiconductor light-emitting element is equipped with a multiple quantum well structure having a nitride semiconductor layer portion (6) including an active layer (4) for forming at least a light emitting portion on a substrate (1), wherein the active layer is formed by laying well layers (7) composed of In<SUB>x</SUB>Ga<SUB>1-x</SUB>N (0<x=1) and barrier layers (8) composed of Al<SUB>y</SUB>In<SUB>z</SUB>Ga<SUB>1-y-z</SUB>N (0=y<1, 0=z<1, 0=y+z<1, z<x) alternately. The well layer is divided at least into a first well layer (7a) and a second well layer (7b) by a thin film barrier layer (7c) which is composed of Al<SUB>v</SUB>In<SUB>w</SUB>Ga<SUB>1-v-w</SUB>N (0=v<1, 0=w<1, 0=v+w<1, w<x) and formed to have a thickness not less than one atomic layer and not more than 20Å.</p> |
