发明名称 |
TECHNIQUE FOR REDUCING CRYSTAL DEFECTS IN STRAINED TRANSISTORS BY TILTED PREAMORPHIZATION |
摘要 |
By performing a tilted amorphization implantation (208, 308P, 308N) and a subsequent re-crystallization on the basis of a stressed overlying material (209, 211, 309, 311, 319S), a highly efficient strain-inducing mechanism is provided. The tilted amorphization implantation (208, 308P, 308N) may result in a significantly reduced defect rate during the re-crystallization process, thereby substantially reducing leakage currents in sophisticated transistor elements (200, 300N, 300P). |
申请公布号 |
WO2007064472(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
WO2006US44292 |
申请日期 |
2006.11.15 |
申请人 |
ADVANCED MICRO DEVICES, INC.;HOENTSCHEL, JAN;WEI, ANDY;HEINZE, MARIO;JAVORKA, PETER |
发明人 |
HOENTSCHEL, JAN;WEI, ANDY;HEINZE, MARIO;JAVORKA, PETER |
分类号 |
H01L21/336;H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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